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GR511x
GR511x

The Goodix GR511x series is an SoC designed for consumer healthcare applications. It integrates core modules including a Bluetooth LE MCU and an electrochemical analog front-end (AFE), making it ideal for application scenarios such as continuous glucose monitoring (CGM) and sweat analysis sensing.

Based on Arm China® STAR-MC1 core (Cortex®-M33 compatible), the GR511x integrates a 2.4 GHz RF transceiver, Bluetooth LE 6.1 protocol stack, 112 KB/160 KB system RAM, 512 KB/1 MB on-chip Flash memory, an electrochemical AFE, and a rich set of peripherals. The built-in electrochemical AFE supports 2-electrode, 3-electrode, and 4-electrode electrochemical sensing, and features an on-chip temperature sensor with support for an external NTC, enabling high-accuracy blood glucose data acquisition.

GR5405系列

Key Features

  • Bluetooth® LE Wireless Microcontroller

    • 64 MHz STAR-MC1 processor (compatible with Arm®Cortex®-M33)

    • On-chip memories

      • SRAM

        • GR5111DEBC: 112 KB

        • GR5112DGBC: 160 KB

      • Internal Flash

        • GR5111DEBC: 512 KB

        • GR5112DGBC: 1 MB

    • Bluetooth LE Stack

      • Encrypted Advertising Data (EAD)

      • Up to 16 simultaneous connections

    • High-performance radio

      • TX power: up to +4 dBm

      • RX sensitivity: –97 dBm @ Bluetooth LE 1 Mbps

    • Security

      • Complete secure computing engine

        • AES 128-bit/192-bit/256-bit symmetric encryption (ECB, CBC)

        • Hash-based Message Authentication Code (HMAC-SHA256)

        • Public-key cryptography (PKC)

        • True random number generator (TRNG)

        • Hardware CRC32 with DMA input support

      • Comprehensive security operation mechanism

        • Secure boot

        • Secure debug

        • Secure key storage

    • MCU peripherals

      • Digital peripherals

        • 1 x 6-channel DMA with M2M, M2P, and P2M transmission modes

      • Analog peripherals

        • 1x ADC with 10-bit ENOB (max. 1000 ksps), supporting up to eightI/O channels and two internal signal channels

        • Integrated programmable gain amplifier (PGA) that offers selectable gains of x2, x4, and x8, achieving an equivalent INL of 0.25 LSB (10-bit) @ x8 gain

        • 1 x low-power comparator supporting wake-up from sleep mode

        • Built-in die temperature sensor and voltage sensor

      • Communication peripherals

        • 1 x SPI master interface, up to 32 MHz

        • 2 x I2C interfaces for peripheral communication, up to 1 Mbps

        • 2 x UART interfaces up to 4 Mbps, supporting flow control (UART1 only), IrDA, and 1-wire protocol

      • I/O peripherals

        • 11 x I/Os

      • Timers

        • 2 x general-purpose, 32-bit timers

        • 1 x dual timer composed of two programmable 32-bit or 16-bit down counters

        • 1 x sleep timer for waking the device up from sleep mode

        • 2 x AON watchdog timers with configurable clock source, supporting independent running

        • 1 x real-time counter (RTC)

        • 2 x PWM modules (PWM0: 2-channel, PWM1: 3-channel) with edge-aligned mode and center-aligned mode

      • Debug

        • SWD interface

      • Clocks

        • 24 MHz crystal oscillator (doubled internally to 48 MHz)

        • 32.768 kHz crystal oscillator

        • Built-in 32 kHz low-frequency RC oscillator

        • Built-in 64 MHz high-frequency RC oscillator

        • Built-in 256 kHz low-frequency RC oscillator

    • Power management

      • On-chip DC-DC converter and LDO regulators

      • Supply voltage: 2.0 V-3.3 V, single power supply with buck mode

  • Analog Front-end (AFE)

    • 3 x DACs, up to 12-bit resolution, with a bias voltage range of –700 mV to 700 mV

    • 2 x 24-bit ADCs with 17.4-bit ENOB

    • Current detection range: 0.1 nA to 2 μA, with referred-to-input noise of 2 pA @ 3.2 MΩ

  • Low Power Consumption

    • Bluetooth LE MCU power consumption

      • 30 μA/MHz running CoreMark® @ 3.3 V VSYSH input, 64 MHz clock

      • Sleep mode: 2.72 μA @ 3.3 V VSYSH input, with 32 KB data retained, wake-up source from AON timer, GPIO, and Bluetooth LE events

      • Ship mode: 20 nA with VSYSH on, can be woken up by a dedicated pin, saving system power during storage and shipping

    • Radio consumption

      • TX current: 4.0 mA @ 0 dBm, 3.3 V VSYSH input

      • RX current: 3.5 mA @ 3.3 V VSYSH input

    • AFE power consumption

      • Bias mode: 6.4 μA (3.0 V, one 3-terminal sensor)

      • Working electrode (WE) current sampling mode: 6.6 μA (3.0 V, single sensor @1 Hz sampling rate)

  • ESD

    • HBM: 2 kV

    • CDM: 500 V

  • Operating Temperature

    • Temperature range: 0°C to 70°C

  • Package

    • BGA45: 3.0 mm x 3.0 mm x 0.77 mm, 0.4/0.5 mm pitch

    • RoHS compliant

Read More

Product Details

Part Number

GR5111DEBC GR5112DGBC
CPU STAR-MC1, compatible with Cortex@-M33 STAR-MC1, compatible with Cortex@-M33
SRAM 112 KB 160 KB
SiP Flash 512 KB 1 MB
I/O Number 11 11
Electrode Channels 1 2
Package (mm) BGA45 (3.0 x 3.0 x 0.77) BGA45 (3.0 x 3.0 x 0.77)
Operating Temperature 0°C to 70°C 0°C to 70°C
Supply Voltage 2.0 V to 3.3 V 2.0 V to 3.3 V

Part Number

GR5111DEBC GR5112DGBC
CPU STAR-MC1, compatible with Cortex®-M33 STAR-MC1, compatible with Cortex®-M33
SRAM 112 KB 160 KB
SiP Flash 512 KB 1 MB
I/O Number 11 11
Electrode Channels 1 2
Package (mm) BGA45 (3.0 x 3.0 x 0.77) BGA45 (3.0 x 3.0 x 0.77)
Operating Temperature 0°C to 70°C 0°C to 70°C
Supply Voltage 2.0 V to 3.3 V 2.0 V to 3.3 V
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